Selective encapsulation for metal electrodes of embedded memory devices

ABSTRACT

A semiconductor device structure and a method for fabricating the same. The semiconductor device structure includes an embedded memory device and an electrode in contact with a top surface of the memory embedded device. A metal encapsulation layer is in contact with a top surface of the electrode and a portion of sidewalls of the electrode. The metal encapsulation layer comprises one or more materials that are chemical etch resistant and are conductive when oxidized. The method includes forming an insulating layer over a memory device and an electrode in contact with the memory device. Portions of the insulating layer are etched. The etching exposes a top surface and a portion of sidewalls of the electrode. A metal encapsulation layer is formed over and in contact with the top surface and the portion of sidewalls of the electrode.

BACKGROUND OF THE INVENTION

The present disclosure generally relates to the field of semiconductors,and more particularly relates to encapsulation for metal electrodes ofembedded memory devices.

Memory devices are often embedded or integrated on-chip to realizevarious advantages such as reduced chip number, increased responsetimes, etc. Embedded memory devices may utilize technologies such asmagnetic tunnel junctions, phase change materials, and/or the like.Components of the embedded memory devices are often susceptible todamage during subsequent processing and integration operations. Forexample, the top electrode of a memory device may become eroded ordamaged while the memory device is being embedded in the backend of theline interconnects.

SUMMARY OF THE INVENTION

In one embodiment, a method for encapsulating an electrode of a memorydevice is disclosed. The method comprises forming an insulating layerover a memory device and an electrode in contact with the memory device.Portions of the insulating layer are etched. The etching exposes a topsurface and a portion of sidewalls of the electrode. A metalencapsulation layer is formed over and in contact with the top surfaceand the portion of sidewalls of the electrode.

In another embodiment, a semiconductor device structure is disclosed.The semiconductor device structure comprises an embedded memory deviceand an electrode in contact with a top surface of the memory embeddeddevice. A metal encapsulation layer is in contact with a top surface ofthe electrode and a portion of sidewalls of the electrode. The metalencapsulation layer comprises one or more materials that are chemicaletch resistant and are conductive when oxidized.

In a further embodiment, an integrated circuit is disclosed. Theintegrated circuit comprises an embedded memory device and an electrodein contact with a top surface of the memory embedded device. A metalencapsulation layer is in contact with a top surface of the electrodeand a portion of sidewalls of the electrode. The metal encapsulationlayer comprises one or more materials that are chemical etch resistantand are conductive when oxidized.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying figures where like reference numerals refer toidentical or functionally similar elements throughout the separateviews, and which together with the detailed description below areincorporated in and form part of the specification, serve to furtherillustrate various embodiments and to explain various principles andadvantages all in accordance with the present invention, in which:

FIG. 1 is a cross-sectional view of a semiconductor device structureafter one or more memory devices have been patterned according to oneembodiment of the present invention;

FIG. 2 is a cross-sectional view of the semiconductor device structureafter an insulating layer has been formed according to one embodiment ofthe present invention;

FIG. 3 is a cross-sectional view of the semiconductor device structureafter the insulating layer has been etched back according to oneembodiment of the present invention;

FIG. 4 is a cross-sectional view of the semiconductor device structureafter a metal encapsulation layer has been formed in contact withexposed portions of a top electrode contacting the memory deviceaccording to one embodiment of the present invention;

FIG. 5 is a cross-sectional view of the semiconductor device structureafter an inter-layer dielectric has been formed according to oneembodiment of the present invention;

FIG. 6 is a cross-sectional view of the semiconductor device structureafter a patterning stack has been formed according to one embodiment ofthe present invention;

FIG. 7 is a cross-sectional view of the semiconductor device structureafter contact trenches have been formed in the inter-layer dielectricusing the patterning stack according to one embodiment of the presentinvention;

FIG. 8 is a cross-sectional view of the semiconductor device structureafter one or more contacts have been formed according to one embodimentof the present invention; and

FIG. 9 is an operational flow diagram illustrating one example of aprocess for encapsulating electrodes of memory devices according to oneembodiment of the present invention.

DETAILED DESCRIPTION

It is to be understood that the present disclosure will be described interms of a given illustrative architecture; however, otherarchitectures, structures, substrate materials and process features andsteps may be varied within the scope of the present disclosure.

It will also be understood that when an element such as a layer, regionor substrate is referred to as being “on” or “over” another element, itcan be directly on the other element or intervening elements may also bepresent. In contrast, when an element is referred to as being “directlyon” or “directly over” another element, there are no interveningelements present. It will also be understood that when an element isreferred to as being “connected” or “coupled” to another element, it canbe directly connected or coupled to the other element or interveningelements may be present. In contrast, when an element is referred to asbeing “directly connected” or “directly coupled” to another element,there are no intervening elements present.

The present disclosure may include a design for an integrated circuitchip, which may be created in a graphical computer programming language,and stored in a computer storage medium (such as a disk, tape, physicalhard drive, or virtual hard drive such as in a storage access network).If the designer does not fabricate chips or the photolithographic masksused to fabricate chips, the designer may transmit the resulting designby physical means (e.g., by providing a copy of the storage mediumstoring the design) or electronically (e.g., through the Internet) tosuch entities, directly or indirectly. The stored design is thenconverted into the appropriate format (e.g., GDSII) for the fabricationof photolithographic masks, which typically include multiple copies ofthe chip design in question that are to be formed on a wafer. Thephotolithographic masks are utilized to define areas of the wafer(and/or the layers thereon) to be etched or otherwise processed.

Methods as described herein may be used in the fabrication of integratedcircuit chips. The resulting integrated circuit chips can be distributedby the fabricator in raw wafer form (that is, as a single wafer that hasmultiple unpackaged chips), as a bare die, or in a packaged form. In thelatter case the chip is mounted in a single chip package (such as aplastic carrier, with leads that are affixed to a motherboard or otherhigher-level carrier) or in a multichip package (such as a ceramiccarrier that has either or both surface interconnections or buriedinterconnections). In any case the chip is then integrated with otherchips, discrete circuit elements, and/or other signal processing devicesas part of either (a) an intermediate product, such as a motherboard, or(b) an end product. The end product can be any product that includesintegrated circuit chips, ranging from toys and other low-endapplications to advanced computer products having a display, a keyboardor other input device, and a central processor.

Reference in the specification to “one embodiment” or “an embodiment” ofthe present principles, as well as other variations thereof, means thata particular feature, structure, characteristic, and so forth describedin connection with the embodiment is included in at least one embodimentof the present principles. Thus, the appearances of the phrase “in oneembodiment” or “in an embodiment”, as well any other variations,appearing in various places throughout the specification are notnecessarily all referring to the same embodiment.

It is to be understood that the various layers and/or regions shown inthe accompanying drawings are not drawn to scale, and that one or morelayers and/or regions of a type commonly used in complementarymetal-oxide semiconductor (CMOS), field-effect transistor (FET), finfield-effect transistor (finFET), metal-oxide-semiconductor field-effecttransistor (MOSFET), and/or other semiconductor devices may not beexplicitly shown in a given drawing. This does not imply that the layersand/or regions not explicitly shown are omitted from the actual devices.In addition, certain elements may be left out of particular views forthe sake of clarity and/or simplicity when explanations are notnecessarily focused on the omitted elements. Moreover, the same orsimilar reference numbers used throughout the drawings are used todenote the same or similar features, elements, or structures, and thus,a detailed explanation of the same or similar features, elements, orstructures will not be repeated for each of the drawings.

Components of the embedded memory devices are often susceptible todamage during subsequent processing and integration operations. Forexample, the top electrode of a memory device may become eroded ordamaged while the memory device is being embedded in the backend of theline interconnects. As will be discussed in greater detail below,embodiments of the present invention overcome these problems byencapsulating the top electrodes of an embedded memory device with ametal encapsulation layer. The metal encapsulation layer comprises oneor more materials that are chemical etch resistant and that are highlyconductive when oxidized.

FIGS. 1-8 illustrate various processes for selective encapsulation ofmetal electrodes for embedded memory devices according to variousembodiments of the present invention. Embodiments of the presentinvention are directed to a point in the fabrication process after thememory device has been patterned as shown in FIG. 1 . In particular,FIG. 1 shows a semiconductor structure 100 comprising one or morepatterned memory devices 102, 104. The patterned memory device(s) 102,104 may be a magnetic tunnel junction (MTJ) device, a phase changememory (PCM) device, or any other type of memory device capable of beingembedded/integrated on-chip.

In one example, the semiconductor structure 100 further includes ametallization material stack that includes one or more metallizationlayers 106, 108. A first metallization layer 106 (which may also bereferred to as a bottom metallization layer) may be disposed directly ona semiconductor stack. The first metallization layer 106 may becomprised of one or more layers including a first layer 110, a secondlayer 112, a third layer 114, etc. The first layer 110 may comprise anoxide, moderate-k dielectric, and/or the like. The second layer 112 maybe disposed on and in contact with the first layer 110 and may comprisea capping material such as silicon carbide, hydrogen and nitrogen dopedsilicon carbide, silicon nitride, and/or the like. The third layer 114may be disposed on and in contract with the second layer 112 andcomprise an insulating material such as a low-k dielectric, ultra-low-kdielectric, and/or the like. It should be noted that embodiments are notlimited to the layers of the first metallization layer 106 shown in FIG.1 as additional layers may be added and/or one or more layers may beremoved.

The first metallization layer 106 may comprise patterned metal layers116, 118 embedded therein. In the example shown in FIG. 1 , thepatterned metal layers 116, 118 are embedded within the first layer 110,second layer 112, and third layer 114 of the first metallization layer106. The patterned metal layers 116, 118 in one example, aremetallization contacts comprising, tungsten, copper, cobalt, and/or thelike. The second metallization layer 108 (which in certain embodimentsmay also be referred to as a top metallization layer) may be disposed onthe first metallization layer 106. In one example, the secondmetallization layer 108 comprises silicon carbide, hydrogen and nitrogendoped silicon carbide, silicon nitride, and/or the like. It should benoted that while the metallization material stack may include the secondmetallization layer 108 disposed directly on the first metallizationlayer 106, in various embodiments the metallization material stack mayinclude one or more intervening metallization layers between the firstand second metallization layers 106, 108. That is, the secondmetallization layer 108 would be disposed on one or more interveningmetallization layers, or other material layers, which would be disposedon the first metallization layer 106.

In some examples, a dielectric insulating layer (not shown) may separatethe second metallization layer 108 from the first metallization layer106. This dielectric insulating layer may be used to separate at leastsome metal wiring, circuits, and junctions, in the second metallizationlayer 108 from making direct electrical contact with metal wiring,circuits, and junctions, in the first metallization layer 106. Thedielectric insulating layer may be removed at selected locations toallow electrical interconnection, e.g., wiring and junctions, to extendfrom the second metallization layer 108 down to the first metallizationlayer 106, and/or further below to a semiconductor stack (not shown).The dielectric insulating layer may include, for example, dielectricmaterial such as silicon oxide or carbon-doped oxide, or other low Kdielectrics.

In one example, the second metallization layer 108 comprises one or moreelectrodes 120, 122 (also referred to herein as “bottom electrodes 120,122”). In this example, the top surface of the bottom electrode 120, 122is planar with a top surface of the second metallization layer 108 and abottom surface of the electrode 120, 122 contacts a top surface of thepattern metal layer 116, 118. The bottom electrode 120, 122 may comprisecopper, titanium nitride (TiN), tantalum nitride (TaN), tungsten (W),and/or the like. The memory device 102, 104 may be formed on and incontact with the bottom electrode 120, 122. In some instances the memorydevice 102, 104 may also be formed in contact with the secondmetallization layer 108. One or more electrodes 124, 126 (also referredto herein as “top electrodes 124, 126”) may be formed on and in contactwith the memory device 102, 104. The top electrode 124, 126 may comprisetantalum nitride (TaN), tungsten (W), tantalum (Ta), aluminum (Al),hafnium (Hf), titanium nitride (TiN), copper (Cu), cobalt (Co), and/orthe like. Generally, these top electrode materials are sensitive to postprocessing (e.g., susceptible to dry or wet etch damage and formsresistive metal oxide)

FIG. 2 shows that after the structure 100 of FIG. 1 has been formed, theexposed structures of the device are encapsulated. For example, anencapsulation layer 202 may be formed by depositing a dielectricmaterial such as a silicon oxide, silicon nitride, silicon carbideand/or the like over and in contact with the top surface of the secondmetallization layer 108; sidewalls of the memory device 102, 104;sidewalls of the top electrode 124, 126; and the top surface of the topelectrode 124, 126. The dielectric layer may be deposited using apassivation layer deposition process such as chemical vapor deposition(CVD), Plasma enhanced CVD (PECVD) and/or any other applicable process.The encapsulation layer 202 protects the memory device from degradationdue to exposure to ambient oxygen and moisture as well as from anydamages during later processing operations.

After the encapsulation layer 202 has been formed it is etched back asshown in FIG. 3 . For example, an etching process such as reactive ionetching (RIE) may be used to remove portions of the encapsulation layer202 from the top surface of the second metallization layer 108; the topsurface of the top electrode 124, 126; and a portion of the sidewalls ofthe top electrode 124, 126. FIG. 4 shows that a metal encapsulationlayer 402, 404 is then formed over and in contact with the exposedsidewalls of the top electrode 124, 126; the top surface of the topelectrode 124, 126; and a top surface of the dielectric encapsulationlayer 202.

In one example, the metal encapsulation layer 402, 404 may beselectively formed using atomic layer deposition and/or other applicableprocesses where the metal growth is selective to dielectricencapsulation layer 202. The selectivity of the metal growth is enhancedby precursor adhesion to the top electrode 124 due to the surface energydifference compared to the surrounding dielectric materials. Thedeactivation of the insulating materials through, for example, graftedorganic materials on the insulator surfaces may also be used to improvethe selectivity. The organic deactivation layers may be designed withchemical functionality that selectively graft to the dielectric surfacesbut not to exposed metal areas.

The metal encapsulation layer 402, 404 may be comprised of a singlelayer or multiple layers of metals such as ruthenium (Ru), iridium (Jr),other noble metals, chromium (Cr), and/or other materials that arechemical etch resistant and have a highly conducting oxide. Oneadvantage of the metal encapsulation layer 402, 404 is that it preventsthe top electrode from becoming eroded or damaged while embedding thememory device in the backend. Another advantage is that theencapsulation layer 402, 404 chemical etch resistant and forms a highlyconductive oxide when exposed to ambient or oxygen containing plasmathat allows the top electrode to maintain desired electrical contactresistance properties.

After formation of the metal encapsulation layer 402, 404, aninter-layer dielectric (ILD) layer 502 may be formed over the entirestructure, as shown in FIG. 4 . The ILD layer 502 may be formed using adeposition method, such as chemical vapor deposition (CVD), e.g., plasmaenhanced chemical vapor deposition (PECVD), deposition from chemicalsolution, or spin on deposition.

FIG. 6 shows that a top interconnect patterning stack 602 may then beformed on and in contact with the ID 502. In the example shown in FIG. 6the stack 602 comprises multiple hardmask layers 604, 606, 608 such assacrificial nitride, titanium nitride, oxide, and/or the like. The stack602 may also comprise a tri-layer or quad layer lithography stacks. Forexample, FIG. 6 shows that the stack 602 comprises an organicplanarization layer (OPL) 610, an anti-reflective coating (ARC) 612, anda photoresist layer 614. The OPL 610 may include a material(s) such asspin-on carbon (SOC), diamond-like carbon, polyarylene ether, polyimide,polymethyl methacrylate, polymethylisopropenyl ketone, photoresists,and/or the like. The OPL 610 may be formed utilizing any conventionaldeposition process including, for example, CVD, PVD, plasma enhancedchemical vapor deposition (PECVD), evaporation, spin coating, and dipcoating. Chemical mechanical planarization (CMP) and/or grinding may beused to planarize the deposited OPL.

The ARC layer 612 may comprise a silicon-ARC, titanium-ARC, and/or thelike. The ARC layer 612 may be formed by, for example, one or moreprocesses including sputtering, evaporation, CVD, PVD, ALD, and/or thelike. The photoresist layer 614 may comprise a material that issensitive to one or more types of radiation such as extreme ultraviolet(EUV) light, ultraviolet light, electron beam, X-ray, and/or the like.The photoresist layer 614 may be deposited using one or more processessuch as CVD, PVD, ALD, and/or the like.

The photoresist layer 614 may be patterned using any suitablephotolithography technique. For example, in on embodiment, a photomaskis disposed over the photoresist layer. The photoresist layer may thenbe exposed to a radiation beam, and then hardened via a curing or bakingprocess. Unexposed or exposed portions of the photoresist layer may thenbe removed using a developer. The foregoing process results in thedesired pattern. The pattern includes portions of the photoresist layer614 in contact with ARC layer 612 with openings 616, 618 between theseportions exposing the ARC layer 612. In some embodiments, the portionsof the photoresist layer 614 may be trimmed using, for example, ananisotropic plasma etch process.

After the photoresist layer 612 has been patterned, the pattern istransferred down to the ILD 502, as shown in FIG. 7 . For example, aselective etching process may be used to first transfer the pattern tothe ARC layer 612. A separate selective etching process may then be usedto transfer the pattern to the OPL 610. Alternatively, the ARC layer 612and the OPL 610 may be etched using a single etching process. One ormore etching processes may then be used to transferring the pattern downto each hardmask layer 604 to 608 and then down to the ILD 502.Remaining photoresist layer 614, the ARC layer 612, and the OPL 610 maybe removed by, for example, reactive ion etch (RIE). The remaining hardmasks 608 to 610 may also be removed using one or more RIE processes,wet process and/or chemical mechanical polish (CMP).

The patterning process forms one or more trenches 702, 704 for aninterconnect(s) within the ILD 502. The trench 702, 704 exposes at leasta portion of the top surface of the metal encapsulation layer 402, 404.The etch resistant metal encapsulation layer 402, 404 protects the topelectrode 124, 126 during the patterning processes, mask removalprocesses, and other subsequent processes. FIG. 8 shows that a metalfill process may then be performed to fill the trenches 702, 704 to formone or more interconnects/contacts 802, 804. For example, a copper seedmay be deposited via PVD followed by copper plating, though chemicalvapor deposition (CVD) techniques could be used as well. However, othermaterials and processes may be utilized to form the interconnect/contact802, 804. For example, copper, cobalt, tungsten, aluminum, a combinationthereof, and other the like may be used to fill the trenches 702, 704.The metal may be planarized such that the top surface of theinterconnects/contacts 802, 804 is planar with the top surface of theILD 502.

FIG. 9 is an operational flow diagram illustrating one example of aprocess for encapsulating electrodes of memory devices. It should benoted that each of the steps shown in FIG. 9 has been discussed ingreater detail above with respect to FIGS. 1 to 8 . An insulating layer,at step 902, is formed over a memory device and an electrode in contactwith the memory device. Portions of the insulating layer, at step 904,are etched. The etching exposes a top surface and a portion of sidewallsof the electrode. A metal encapsulation layer, at step 906, is formedover and in contact with the top surface and the portion of sidewalls ofthe electrode. An inter-layer dielectric, at step 908, is formed overand in contact with the insulating layer and metal encapsulation layer.One or more contact trenches, at step 910, are formed within theinter-layer dielectric. The one or more contact trenches expose at leasta portion of the metal encapsulation layer. A contact, at step 912, isformed within the one or more contact trenches.

Although specific embodiments have been disclosed, those having ordinaryskill in the art will understand that changes can be made to thespecific embodiments without departing from the spirit and scope of thedisclosure. The scope of the disclosure is not to be restricted,therefore, to the specific embodiments, and it is intended that theappended claims cover any and all such applications, modifications, andembodiments within the scope of the present disclosure.

It should be noted that some features of the present disclosure may beused in one embodiment thereof without use of other features of thepresent disclosure. As such, the foregoing description should beconsidered as merely illustrative of the principles, teachings,examples, and exemplary embodiments of the present disclosure, and not alimitation thereof.

Also note that these embodiments are only examples of the manyadvantageous uses of the innovative teachings herein. In general,statements made in the specification of the present application do notnecessarily limit any of the various claimed disclosures. Moreover, somestatements may apply to some inventive features but not to others.

What is claimed is:
 1. A semiconductor device structure comprising atleast: an embedded memory device; an electrode in contact with a topsurface of the memory embedded device; and a metal encapsulation layerin contact with a top surface of the electrode and a portion ofsidewalls of the electrode.
 2. The semiconductor device structure ofclaim 1, further comprising: an insulating layer in contact withsidewalls of the embedded memory device and a portion of sidewalls ofthe electrode.
 3. The semiconductor device structure of claim 1, furthercomprising: at least one contact formed on the metal encapsulationlayer.
 4. The semiconductor device structure of claim 3, wherein the atleast one contact is formed within an inter-layer dielectric.
 5. Thesemiconductor device structure of claim 1, further comprising: anadditional electrode formed in contact with a bottom surface of theembedded memory device.
 6. The semiconductor device structure of claim 5wherein the additional electrode is further formed in contact with oneor more metallization layers.
 7. The semiconductor device structure ofclaim 1, wherein the metal encapsulation layer comprises one or morematerials that are chemical etch resistant and are conductive whenoxidized.
 8. An integrated circuit comprising an embedded memory device;an electrode in contact with a top surface of the memory embeddeddevice; and a metal encapsulation layer in contact with a top surface ofthe electrode and a portion of sidewalls of the electrode.
 9. Theintegrated circuit of claim 8, further comprising: an insulating layerin contact with sidewalls of the embedded memory device and a portion ofsidewalls of the electrode.
 10. The integrated circuit of claim 8,further comprising: at least one contact formed on the metalencapsulation layer.
 11. The integrated circuit of claim 10, wherein theat least one contact is formed within an inter-layer dielectric.
 12. Theintegrated circuit claim 8, further comprising: an additional electrodeformed in contact with a bottom surface of the embedded memory device.13. The integrated circuit of claim 12, wherein the additional electrodeis further formed in contact with one or more metallization layers. 14.The integrated circuit of claim 8, wherein the metal encapsulation layercomprises one or more materials that are chemical etch resistant and areconductive when oxidized.
 15. A semiconductor device structurecomprising at least: an embedded memory device; an electrode in contactwith a top surface of the memory embedded device; an insulating layer;and a metal encapsulation layer in contact with a top-most surface ofthe electrode and a portion of sidewalls of the electrode, whereinsidewalls of the metal encapsulation layer and sidewalls of theinsulating layer are coplanar.
 16. The semiconductor device structure ofclaim 15, further comprising: at least one contact formed on the metalencapsulation layer.
 17. The semiconductor device structure of claim 16,wherein the at least one contact is formed within an inter-layerdielectric.
 18. The semiconductor device structure of claim 15, furthercomprising: an additional electrode formed in contact with a bottomsurface of the embedded memory device.
 19. The semiconductor devicestructure of claim 18, wherein the additional electrode is furtherformed in contact with one or more metallization layers.
 20. Thesemiconductor device structure of claim 15, wherein the metalencapsulation layer comprises one or more materials that are chemicaletch resistant and are conductive when oxidized.